Model for stress in ZMR SOI obtained with spot- or line-shaped heat sources

A model is presented that allows the calculation of the absolute value of the final stress in ZMR SOI (silicon-on-insulator) layers. Both the case of a line shaped heat source, such as a lamp heater or a graphite strip heater, and the case of a scanning focused spot shaped beam, e.g., a laser or electron beam, are described based on one common physical model. Different calculated and measured values for linear and spot heat sources are listed, and the calculated results are in agreement with experimental observations.<
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