Multistable body potentials-the cause for hysteresis behavior in SOI MOSFETs

The BCS (body current scanning) technique has been used to resolve the hysteresis effect in the I/sub DS/ and I/sub DS/-V/sub DS/ characteristics for SOI (silicon-on-insulator) NMOS transistors. BCS has identified the presence of multistable body potentials to be the cause of hysteresis. Furthermore, the amount of charges accumulated in the SOI body can be modulated by maximum electric field, carrier lifetime, and parasitic bipolar emitter injection efficiency. As a result, the hysteresis effect is more pronounced at high drain bias or lower temperature.<
>