Body-doping considerations for high performance 0.1- mu m SOI MOSFETs

Various factors for determining body doping for a high performance 0.1- mu m SOI (silicon-on-insulator) MOSFET technology are considered. Long channel constraints on body doping and thickness for assuring full depletion are treated first. Then short channel considerations for body doping for a high performance 0.1- mu m SOI MOSFET technology are summarized.<
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