A new nondestructive dual beam optical modulation (DBOM) technique for minority carrier lifetime measurements in SOI materials

A novel measurement technique is developed for the nondestructive characterization of the minority carrier lifetime in SIMOX (separation by implanted oxygen) substrates, based on the dual-beam optical modulation (DBOM) technique. This method is based on the change of the transmission intensity of infrared light through a SOI (silicon-on-insulator) wafer due to absorption by free carriers in silicon. The excess carriers are generated by a pump beam while the change in the transmission intensity of the infrared probe beam is monitored.<
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