Monitoring the temperature rise in SOI transistors by measurement of leakage current

The peak temperature rise due to self-heating in the silicon body of an n-channel transistor was measured by monitoring the leakage current as a function of the maximum power density. The transistors were fabricated using SIMOX technology where the equivalent of 1.8*10/sup 18/ O/sup +/ ions/cm/sup 2/ were implanted at an energy of 200 keV followed by an anneal at 1300 degrees C for 6 h. The technique requires a contact to the body region with which to monitor the leakage currents. A significant temperature rise is observed for low power densities. The advantage of this techinque is that peak temperature rise is measured in an actual transistor from a simple measurement and analysis. Furthermore, the enhanced leakage current, which the technique measures, provides an additional source of base current for the parasitic lateral bipolar transistor.<
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