Hot electron gate current and degradation in P-channel SOI MOSFETs

I/sub G/ in P-channel SOI (silicon-on-insulator) MOSFETs is modeled and device degradation is characterized. It is found that E/sub m/ is about the same as in bulk devices. The SOI devices used in this study were p/sup +/ polysilicon gate P-channel MOSFETs fabricated using a modified submicron CMOS technology on SIMOX (Separation by IMplanted OXygen) wafers. It is shown that the peak degradation of both I/sub D/ and G/sub m/ occurs close to the I/sub g/ peak. This indicates that electron injection is the dominant mechanism for PMOS degradation in SOI and similar to bulk PMOS.<
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