2nd generation 600V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection

A new generation of silicon carbide Schottky diodes has been developed which address surge current overload thermal runaway and lack of avalanche clamping by the use of a merged pn/Schottky diode structure. A PN structure with low ohmic contact is used in parallel with Schottky structure to greatly extend peak current handling and also provide avalanche energy capability without compromising dynamic performance.