Device Temperature and Stress Distributions in Power Diode-A Finite Element Method

The requirement of electrical-thermal-stress (ETS) modeling of semiconductor devices demands the use of finite element analysis (FEA) for device simulation. In this work, we employ a new finite element analysis software, FEMLAB for the ETS simulation of power diode, a basic building blocking for power electronic devices. In this preliminary work, static electrical and recovery transient characteristics are considered. The E-T model of the power diode is compared with the results from Medici, and the T-S model of the power diode is compared with the results from ANSYS. Good agreement are obseved from the comparison.