Lateral field emitter with thin-film Au emissive layer

Lateral field emitters have been investigated for years as an alternative source of free electrons. Lateral construction seems to be easier from fabrication point of view, but the micrometer size cathode-anode/gate distance depends mainly on nano-lithographic procedures. In this work we have shown silicon/silicon dioxide/gold lateral emitters, made by controlled under etching of sandwich layer, possessing surprising good emissive properties. Turn-on voltage was of about 6 V in vacuum and 8 V in an air, the threshold field of 0.25 V//spl mu/m and the maximal emission current of about 5 /spl mu/A for 15 V.