C-V test structures for metal gate CMOS

Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for wider-gate structures and for the application of n/sup +/-/sup p-/ diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.