Behavior of a common source traveling wave amplifier versus temperature in SOI technology

In this paper, the design and the results of a CMOS Silicon-On-Insulator (SOI) traveling wave amplifier (TWA) versus temperature are presented. The four stage TWA is designed with a single common source n-MOSFET in each stage using a 130 nm SOI CMOS technology requiring a chip area of 0.75 mm/sup 2/. A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4 V supply voltage with a measured power consumption of 66 mW. The designed circuit has been characterized over a temperature range from 25 to 300/spl deg/C. The performance degradation on the gain of the TWA, the SOI transistors as well as the microstrip lines used for the matching network are analyzed.