Characterization of EOS induced defects on submicron devices using 2D spectral imaging

Localization, identification and characterization of EOS-induced defects found in submicron devices were demonstrated using a new FA procedure. IR photon emission and circuit analysis were used for defect localization while spectral profile of photon emission was utilized for defect finger-printing analysis. Finally, frontside and backside FA methods were done to confirm the actual failure mechanism in the device under analysis