High performance multi-gate pMOSFET using uniaxially-strained SGOI channels

We propose a novel multi-gate CMOS structure having a high mobility channel with optimal strain configuration, realized by appropriately merging globally-strained substrates with lateral strain relaxation technique. We report successful fabrication and operation of uniaxially-strained SGOI fin and tri-gate pMOSFETs. The improved SCE immunity and the performance enhancement are demonstrated