High density and high speed SRAM bit-cells and ring oscillators due to laser annealing for 45nm bulk CMOS

In this work, we report on the integration of 30nm gate length CMOS devices fabricated using laser spike annealing (LSA). Considerably improved short channel effects and drive current (+10% I
_on
at constant I
_off
for NMOS) are demonstrated on samples using LSA. Excellent I
_on
I
_off
characteristics (I
_on
= 940 muA/mum I
_off
= 200 muA/mum for NMOS and I
_on
= 390muA/mum I
_off
= 50 nA/mum for PMOS at V
_dd
= 1 V) are measured that are at the leading edge of the state of the art. Moreover, an enhanced dynamic behavior (-6% in ring oscillator delay) and improved characteristics of high density SRAM bit-cells (+24% I
_cell
for the same 1
_sb
) are reported. These results demonstrate the potential of LSA in the perspective of 30 nm device integration of a 45 nm bulk CMOS platform