Fluorine incorporation into HfSiON dielectric for V/sub th/ control and its impact on reliability for poly-Si gate pFET

F incorporation into HfSiON dielectric using channel implantation technique is shown to be highly effective in lowering V
_th
and improving NBTI in poly-Si gate pFET. Mobility degradation is not accompanied and drive current is increased by 180%. From analytical and electrical characterization, the V
_th
shift is attributed to change in trap density