Mechanisms of hydrogen release in the breakdown of SiO/sub 2/-based gate oxides

The mechanisms of hydrogen release (HR) involved in the degradation and breakdown (BD) of SiO
₂
-based gate dielectrics are studied by means of the analysis of charge to breakdown (Q
_BD
) data versus electron energy, and comparing with scanning tunneling microscope (STM) experiments of H desorption from silicon surfaces. Our results reveal an important role of vibrational and electronic excitation mechanisms