High performance 35nm L/sub GATE/ CMOS transistors featuring NiSi metal gate (FUSI), uniaxial strained silicon channels and 1.2nm gate oxide

This paper describes the fabrication and performance of uniaxial strained silicon CMOS transistors with NiSi metal gate electrodes and ultra-thin 1.2nm gate oxide. This work offers the first comprehensive evaluation of Si CMOS devices integrating NiSi metal gate (FUSI) process with highly strained Si channels. Performance gains from FUSI gate stack and uniaxial strained Si channels are demonstrated to be fully additive and enable record high drive currents - NMOS l/sub DSAT/=1.75mA//spl mu/m, PMOS I/sub DSAT/=1.06mA//spl mu/m (V/sub DD/=1.2V, I/sub OFF/=100nA//spl mu/m). These devices have the best I/sub DSAT/ vs. I/sub OFF/ characteristics reported to date in the industry.