Low voltage high speed SiO/sub 2/AlGaN/AlLaO/sub 3/TaN memory with good retention

To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO
₃
barrier (k=23 ), and smaller erase current by large DeltaE
_C
of AlLaO
₃
/TaN, the SiO
₂
/AlGaN/AlLaO
₃
/TaN devices show good 85degC memory integrity of low plusmn10V 1ms P/E, large 3.9V initial DeltaV
_th
and 2.4V extrapolated 10-year retention. A fast 100mus P/E of plusmn11V still gives 3.0V initial DeltaV
_th
and 1.6V 10-year retention