Design of a wideband active-buffered mixer in enhancement-mode GaAs pHEMT technology

A high linearity single balanced resistive FET mixer with conversion gain has been developed using 0.5 /spl mu/m enhancement-mode pHEMT technology. The mixer consists of an integrated LO buffer amplifier which acts as an active balun, a resistive pHEMT mixer, and a differential cascode IF amplifier at the output. The IF amplifier output is matched to an output balanced impedance using a sum terminating diplexer. The mixer achieves an input IP3 of +23.5dBm with 9.5dB of conversion gain while consuming 110mA from a 5V supply. Useable RF frequency range is (450-2700 MHz).