Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.