A CMOS time-of-flight range image sensor with gates on field oxide structure

This paper presents a new type of CMOS time-of-flight (TOF) range image sensor using single layer gates on field oxide structure for photo conversion and charge transfer. An additional process step to create an n-type buried layer is used. This simple structure allows the realization of a high resolution array with 15 times 15 mum
²
pixels in standard CMOS process. To minimize the influence of background light, the proposed pixel structure has charge draining gates. A small duty cycle optical pulse is also used for this purpose. The TOF sensor chip was successfully implemented and tested