Interface Characterization of Molecular-Monolayer/SiO/sub 2/ Based Molecular Junctions

The properties of monolayers of molecules on thin SiO
₂
are of great interest for future hybrid Si-molecular device technologies. We present here a correlation of the results of dc-current-voltage (IV) and capacitance-voltage (CV) measurements with vibrational spectroscopy of metal/monolayer/SiO
₂
/Si structures to establish an improved understanding of the interactions at the buried metal/monolayer and dielectric/silicon interfaces