Improved Electrical Characteristics and Retention Time of DRAMs Using HSG-merged-AHO Cylinder Capacitor

Fully integrated 512Mb DRAMs using HSG-merged-AHO cylinder capacitor were successfully developed for the first time. Improved electrical characteristics and retention time of HSG-merged-AHO capacitor DRAM was achieved without any capacitor-related leakage current failure in 110nm technology. This technology is expected to be extended to sub-100nm technology