A Novel Tri-Control Gate Surrounding Gate Transistor (TCG-SGT) Flash Memory Cell

In this paper, the authors have proposed the novel TCG-SGT flash memory cell. In addition, the authors have derived the capacitive-coupling ratio and, through process simulation, have proposed a fabrication process for the device. It is obvious that the TCG-SGT memory cell produces a coupling ratio that is exceptionally higher than conventional flash memory cells, making it suitable for future high-density flash memory