Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs

The SEU sensitivity of 0.2 /spl mu/m fully depleted silicon on ensulator (FD-SOI) devices to proton and neutron irradiations is investigated in a large energy range (14-500 MeV). The comparison to bulk devices with similar gate lengths shows an improvement of a factor of 50 with the presence of body ties. Monte Carlo simulations were performed to confirm that the low sensitivity of FD-SOI is mainly due to the reduced sensitive volume. These results were extrapolated to deca-nanometric technologies to predict the behavior of advanced SOI processes. We found that fully depleted devices will be far less sensitive than partially depleted technologies to the terrestrial radiative environment.