Thermal noise in buried-channel MOSFET

A new model for the thermal noise in long buried-channel MOS transistors is presented. The model calculates the dependence of the transistor noise performance on both device fabrication parameters and the four terminal voltages. The noise calculations are based on the gradual channel approximation, using simple charge-voltage relations. Analytic models are obtained for the different regions of operation of the transistor. Noise measurements are presented and compared with results predicted by the model.<
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