A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF-CMOS

The design and measured performance of two low-noise amplifiers at 15 GHz and 20 GHz realized in a 90 nm RF-CMOS process are presented in this work. The 15 GHz LNA achieves a power gain of 12.9 dB, a noise figure of 2.0 dB and an input referred third-order intercept point (IIP3) of -2.3 dBm. The 20 GHz LNA has a power gain of 8.6 dB, a noise figure of 3.0 dB and an IIP3 of 5.6 dBm. Compared to previously reported designs, these two LNAs show lower noise figure at lower power consumption.