A new method of interface trap modeling in quantized MOSFET inversion layers

The effects of quantization on trapping kinetics in MOS devices are two fold: first, carriers emitted from interface traps must be captured in conduction band states that lie at a higher energy than the conduction band edge; second, the wave function defines a probability localizing the inversion layer. Therefore, extensions to current theories must be developed since previous work only considers communication to the surface conduction band energy level and assumes a uniform distribution of electrons in space. Bulk potential bias will change the degree of quantization and must be included in a modified theory to correctly extract the emission time and subsequently determine the capture cross-section values for interface traps. The work of W. Shockley and W.T. Read (1952) and R.N. Hall (1952) is extended to include two-dimensional surface quantization effects and the statistics to account for localization of conduction band change in both space and energy are formulated.