Stable CW operation of a MQW laser emitting at 1.54 mu m on a Si substrate at room temperature

The MQW laser exhibits no degradation during 500 h of CW operation. Employing a hybrid organometallic vapor-phase epitaxy/vapor-phase epitaxy method, high-quality InP films with a full width at half maximum for the X-ray rocking curve of 110 arcsec, a dislocation density of 10/sup 7/ cm/sup -2/, and low residual stress of 2*10/sup 8/ dyn/cm/sup 2/ were obtained. Results of a preliminary CW aging test at room temperature showed no operational degradation over 500 h with a constant output power of 2 mW per facet. This LD appears to be a promising light source candidate for application to OEICs (optoelectronic integrated circuits).