A GaAs MESFET with a partially depleted p layer for SRAM applications

A GaAs MESFET with a partially depleted p layer that has a specific application to SRAMs has been developed. The short-channel effect is well suppressed for gate lengths down to 0.5 mu m by a rather dense p layer buried under the channel. Its acceptor ion dose is as high as 2*10/sup 12/ cm/sup -2/, which corresponds to a partially depleted condition. As for applications for SRAMs, it is possible to attain fully functional 7-ns 4-kb SRAMs that are operative at 75 degrees C by using the FET with a 1- mu m gate. A chip yield of 22% has been achieved in a 3-in wafer.<
>