Fully-integrated dual-standard BiFET low-noise amplifier for DCS1800/WCDMA applications

This paper presents a fully-integrated dual-standard BiFET low noise amplifier (LNA) targeted to DCS1800 (1805-1880 MHz) and WCDMA-FDD (2110-2170 MHz) systems applications. It uses a high performance 0.25-/spl mu/m SiGe:C BiCMOS7RF integration technology. The main motivation of this work is to share as many elements as possible in both modes avoiding conventional parallel LNAs, which is not a cost-efficient solution. In DCS1800 mode, the LNA S21 is 14.9 dB (250 MHz -1 dB bandwidth), NF is 1.47 dB, ICP1 and IIP3 are -12 dBm and -2 dBm, respectively. In WCDMA mode, the LNA achieves a power gain of 15.5 dB (340 MHz -1 dB bandwidth), a NF of 1.49 dB, an ICP1 and IIP3 of -14 dBm and -4 dBm, respectively. It consumes 6.6 mW in both operation modes, under 2.2 V supply voltage.