A Computational Study on the Growth and Composition of InGaAsP Film in a Horizontal MOCVD Reactor

Distribution of growth rate and composition of InGaAsP films along the reactor length direction grown by metalorganic chemical vapor deposition process were studied using computational methods. The influences of process parameters such as pressure, temperature and precursors inlet partial pressures on the growth rate and composition distributions are analyzed. Trimethyl-indium, trimethyl-gallium, tertiary-butylarsine and tertiary-butylphosphine were used as precursors and hydrogen as dilution gas. The reaction model includes 4 gas-phase reactions and 8 surface reactions. Predicted values of the growth rate and composition were compared to the experimental results to validate the numerical model. The influences of heater temperature and operating pressure were analyzed thereafter