MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime

MOSFET harmonic distortion characteristics up to the cutoff frequency (f
_T
) are measured and analyzed with the MOSFET model HiSIM. While distortion characteristics at low frequency are determined by carrier mobility, characteristics at high frequency are influenced by the time delay of carriers to form the channel. At low frequency, IP3 values, calculated using a quasi-static model, correspond to values from the conventional method of extraction. For accurate prediction of IP3, non-quasi-static effects become necessary at high-frequency switching above f
_T
/2