Low noise 400 fs pulse generation by monolithic semiconductor mode-locked laser and soliton pulse compression

In the present paper, we describe pulse generation by a monolithic semiconductor MLL (M-MLL). In this case, the change of the absorber strength by the absorber voltage offers another way for the reduction of the spectral width and thus the reduction of phase noise. The investigated pulse source is a multi-section buried heterostructure laser having an active and a passive part.