Linewidth enhancement factor in semiconductor quantum well In/sub 1-y/Ga/sub y/As and In/sub 1-y/Ga/sub y/As/sub 1-x/N/sub x/

This study investigates the linewidth enhancement factor in semiconductor quantum well In/sub 1-y/Ga/sub y/As and In/sub 1-y/Ga/sub y/As/sub 1-x/ N/sub x/. This work applies the theory based on semiconductor Bloch equations to the calculation of the linewidth enhancement factor of GaInNAs structures compared to an ordinary InGaAs quantum well. Results show that the linewidth enhancement factor is reduced by the inclusion of nitrogen as a consequence of the reduction of carrier-induced refractive index.