A new leakage mechanism in SOI smart power technologies

Smart power SOI technologies are becoming popular because of better isolation. The SOI technology introduces a new electrode, the substrate electrode referred to as back gate. Several papers have reported back gate induced leakage current. This work reports a new leakage mechanism induced by the interaction of the neighbouring device and that back gate. Moreover, possible countermeasures for a 0.8 /spl mu/m 80V SOI technology are presented.