Indirect conversion multi-band radios

The use of indirect conversion for multi-band communications receiver applications is proposed. The architecture employs modified local oscillators in the frequency translation mechanism. Measured results are given for a prototype integrated circuit, fabricated in a standard digital "double-polysilicon", three metal layer, 0.35/spl mu/m CMOS process. Measured results for the prototype include an IRR of 47dB, a voltage gain of 12dB, an IIP2 of 52dBm, and an IIP3 of -5dBm. System-level and circuit-level simulated results are compared to the measured results.