Doping Profile Effects on Device Characteristics of Nano-Scale MOSFETs

We have numerically simulated device characteristics of sub-10 nm gate length bulk n-MOSFETs with various doping profiles, using a quantum transport simulator based on a non-equilibrium Green's function method. Comparing the simulated results, we study effects of the doping profile on the device characteristics. The simulation study reveals that the off-set doping profiles in the source/drain regions play an important role in controlling the direct source-to-drain tunneling current.