Numerical large-signal simulation of the diffusion noise in GaAs Gunn devices

The generation and distribution of the diffusion noise in short GaAs Gunn devices operating under large-signal conditions is simulated numerically by the use of the impedance field method combined with the full hydrodynamic transport model. The method and some results are briefly described. The main conclusions are that this method is, in general, well suited to study the noise behavior of Gunn devices under large-signal conditions, and that earlier estimation about the noise properties can be confirmed, even for short structures.<
>