Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Wide bandgap AlGaN/GaN high electron mobility transistors (HEMTs) are emerging as excellent candidates for high power, high frequency and also high temperature applications. Up to now, the focus has been to improve the performance of depletion-mode (D-mode) AlGaN/GaN HEMTs. From the application point of view, enhancement-mode (E-mode) HEMTs have many advantages.