Controlled super lateral growth enhancement of single pulse laser irradiation by heat-retaining layer

Single-pulse excimer-laser-induced enhancement of lateral crystallization by applying a heat-retaining capping layer on amorphous silicon is well confirmed. Through analysis of polycrystalline silicon microstructure and of transient reflectance signal, we found that the capped sample had a 7 /spl mu/m lateral growth, along with an 1800 ns increased melt duration, which is one order of magnitude larger than the uncapped sample.