Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers

Gain saturation increases the radiative component, J/sub rad/, of the threshold current density, J/sub th/, and its contribution to the thermal sensitivity of J/sub th/ in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.