A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

Although both exact (Taul et al.,2004) and design oriented approximate (Sallese et al., 2005) closed-form analytical solution of the drain current for the symmetric double gate (DG) MOST exist, a closed-form expression for asymmetric DG MOST is still lacking. This work presents an analytic closed-form charge-based expression for the drain current for asymmetric DG MOST. The expression presented in this work is valid from weak to strong inversion and retains the asymptotic behavior.