High-performance varactor diodes integrated in a silicon-on-glass technology

High-performance low-loss boron-passivated Schottky varactor diodes have been fabricated in a silicon-on-glass substrate transfer technology, using laser-annealed back-wafer contacts and copper-plated aluminum. The diodes have well-defined doping profiles predetermined by the circuit application and high quality factors ranging typically from 100 till 300 at 2 GHz.