Characterization of the 4Mb chalcogenide-random access memory

The first generation of C-RAM memory is designed to greatly exceed (in density, write speed, endurance) the existing non-volatile memory solutions for space and to close the gap that exists between system requirements and availability. Based on the success of the 64kb C-RAM program, a 4Mb C-RAM prototype has been designed and fabricated in 0.25 mum radiation-hardened CMOS. In this paper we present a description of the 4Mb design as well as results of recent characterization and radiation test of the first pass of prototype parts