Radiation effects in the quantum-size silicon nanocrystals

Now the silicon nanocrystals (NC) attract the increasing attention. Radiation defects are stable damages of a structure introduced in a solid state by high-energy radiation. High-resolution electron microscopy has shown that annealing results in the formation of NC. The annealing of defects in the partially damaged NC occurs at different temperatures up to 1000 /spl deg/C. Fast quenching of PL after the low ion doses of is an expected result. It is shown, that the introduction even of single defect in NC results in quenching its PL. Prolonged irradiation by light particles, unable to amorphize bulk silicon at 20 /spl deg/C, amorphizes NC. The counteraction of the NC boundaries is one of the possible reasons for much higher crystallization temperature of NC in comparison with bulk Si. Apparently, the introduction of complex defects inside NC does not form the dangling bonds that result in the increased elastic energy losses of more heavy ions for quenching of PL.