Reconstruction phase transition /spl alpha/(2/spl times/4) <-> /spl beta/(2/spl times/4) on [001] GaAs surface

One of the basic and studied problems in molecular beam epitaxy is the question about the nucleation and subsequent lateral growth of initial nucleus on the surface. In this study MBE equipment was used with solid state sources of materials. The RHEED system was applied to get the diffraction patterns on reflection. The changing RHEED patterns determine the surface reconstruction and tracks the reconstructional transition. The [001] GaAs substrates with dimensions 3 /spl times/ 3 mm /sup 2/ were studied.