Dopant-free FUSI Pt/sub x/Si metal gate for high work function and reduced Fermi-level pinning

High work function (4.9 eV) on high-/spl kappa/ gate dielectric, which is suitable for bulk p-MOSFET, has been achieved using fully silicided (FUSI) Pt/sub x/Si gate without boron predoping of polysilicon. High concentration of Pt in FUSI Pt/sub x/Si using Ti capping layer on Pt in the FUSI process is a key to achieving high work function and reduced Fermi-level pinning on high-/spl kappa/ dielectric. By combining with substituted Al (SA) gate for nMOSFET, a wide range of work function difference (0.65 eV) between n and pMOSFETs is demonstrated, without any adverse effects of polysilicon predoping.