Dynamics of carrier-capture processes in Ga/sub 0.47/In/sub 0.53/As/InP near-surface quantum wells

Ga/sub 0.47/In/sub 0.53/As/InP single-quantum wells with thin top barrier layers of InP and InAlAs have been studied by pump-probe experiments and photoluminescence spectroscopy. The excitonic lifetime is reduced by a fast trapping mechanism of carriers into surface states.