Topological characteristics of MBE grown Sb-introduced Ga(In)As covered InAs quantum dots on GaAs

We found the size enlargement of MBE grown InAs quantum dot (QD) on GaAs using a Sb-introduced Ga(In)As cover layer for the first time. The effect of the GaInAsSb cover layer on topological properties of QDs was investigated for various indium (In) and antimony (Sb) compositions in cover layers by atomic force microscopy (AFM). Elongation of the PL wavelength was confirmed as the result of increase of the QD height with reduced lateral size.